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W4SRD0R-0D00 Cree Inc. diameter 50.8mm; semi-insulating; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
W4NXD8C-L000 Cree Inc. diameter 50.8mm; low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C460-CB230-E1000 Cree Inc. 1.3w; colordeep blue; 3.7v; low current ingan led
W6PXD3O-0000 Cree Inc. diameter 50.8mm; lsemi-insulating (prototype); 6h-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C405-XB290-E400-A Cree Inc. 17.0mw; coloruv; 3.7-4.0v; xbright ingan led
W4SRD8R-0D00 Cree Inc. diameter 50.8mm; semi-insulating; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C470-UB290-E1000 Cree Inc. 5.0mw; colorblue; 3.5-3.9v; ultra bright ingan led
CSD10060A Cree Inc. 600v; 10a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
CXXX-MB290-E400 Cree Inc. 5v; 30ma; super bright led. for outdoor led video displays, automative dashboard lighting, white leds, backlighting
W6NRD0X-0000 Cree Inc. diameter 50.8mm; lcw type; 6h-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
CRF-22010-101 Cree Inc. 62.5mw; 120vdc; sic rf power mesfet. for class a,ab amplifiers; tdma, edge, cdma, w-cdma, broadband amplifiers, catv amplifiers, mmds
CSD10060G Cree Inc. 600v; 10a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
W4NXD8D-0000 Cree Inc. diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
W4NXD8C-0000 Cree Inc. diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
CSD04060A Cree Inc. 600v; 4a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
CXXX-CB230-E1000 Cree Inc. 5v; 125ma; super bright led. for communication handsets, backlighting, high resolution video displays
C470-CB290-E1000 Cree Inc. 2.5mw; colorblue; 3.3-3.7v; super bright ingan led
C525-CB290-E1000 Cree Inc. 1.5mw; colorgreen; 3.3-3.7v; super bright ingan led
C430-UB290-E1000 Cree Inc. 2.0mw; 30ma; super bright led for full color displays & moving message signs
C525-UB290-E1000 Cree Inc. 3.0mw; colorgreen; 3.5-3.9v; ultra bright ingan led
C505-XB290-E1000-B Cree Inc. 11.0mw; colorgreen; 3.8-4.0v; xbright ingan led
W4NXE4C-0D00 Cree Inc. diameter 76.2mm; standard micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
CSD05120A Cree Inc. 1200v; 5a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control, high voltage multipliers
CSD06060B Cree Inc. 600v; 6a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
C460-MB290-E1000 Cree Inc. 11.0mw; colordeep blue; 3.7-4.0v; mega bright ingan led
CRF-22010-TB Cree Inc. 50vdc ;66w; evaluation board for crf-22010 version a (narrowband)
CXXX-MB290-E1000 Cree Inc. 5v; 30ma; super bright led. for outdoor led video displays, automative dashboard lighting, white leds, backlighting
CSD01060E Cree Inc. 600v; 1a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
W4NXD8G-0000 Cree Inc. diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C460-UB291-E1000 Cree Inc. 5.5mw; colordeep blue; 3.5-3.9v; ultra bright ingan led
C505-MB290-E1000 Cree Inc. 8.0mw; colorgreen; 3.7-4.0v; mega bright ingan led
C430-CB230-E1000 Cree Inc. 650uw; 15ma; super bright led for high resolution video displays
CSD06060G Cree Inc. 600v; 6a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
W4TRD0R-0D00 Cree Inc. diameter 50.8mm; semi-insulating; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
CSD04060E Cree Inc. 600v; 4a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
C505-XB290-E1000-A Cree Inc. 11.0mw; colorgreen; 3.8-4.0v; xbright ingan led
W4NXE8C-0D00 Cree Inc. diameter 76.2mm; standard micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C470-CB230-E1000 Cree Inc. 1.3w; colordeep blue; 3.7v; low current ingan led
CSD20060D Cree Inc. 600v; 20a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control, snubber
W4NRD8C-U000 Cree Inc. diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C460-XB290-E1000-A Cree Inc. 15.0mw; colordeep blue; 3.7-4.0v; xbright ingan led
CSD10120D Cree Inc. 1200v; 5a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
W6NXD3J-0000 Cree Inc. diameter 50.8mm; lsemi-insulating (prototype); 6h-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
W4NRE0X-0D00 Cree Inc. diameter 76.2mm; standard micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C430-CB290-E1000 Cree Inc. 1150uw; 30ma; super bright led for full color displays & moving message signs
C395-XB290-E400-A Cree Inc. 16.0mw; coloruv; 3.7-4.0v; xbright ingan led
CSD04060B Cree Inc. 600v; 4a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
CXXX-CB290-S0100 Cree Inc. 5v; 30ma; super bright led. for outdoor led video displays, automative dashboard lighting, white leds, backlighting
C405-XB900-B Cree Inc. 250mw; colorblue; 3.7-4.0v; xbright ingan led
C470-MB290-E1000 Cree Inc. 10.0mw; colorblue; 3.7-4.0v; mega bright ingan led
W6NXD0KLSR-0000 Cree Inc. diameter 50.8mm; lsemi-insulating (prototype); 6h-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
CXXX-UB290-S1000 Cree Inc. 5v; 30ma; super bright led. for outdoor led video displays, automative dashboard lighting, white leds, backlighting
CSD06060A Cree Inc. 600v; 6a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
C503-MB290-E1000 Cree Inc. 8.0mw; colorgreen; 3.7-4.0v; mega bright ingan led
W4NXE4C-SD00 Cree Inc. diameter 76.2mm; select micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C527-MB290-E1000 Cree Inc. 7.0mw; colorgreen; 3.7-4.0v; mega bright ingan led
C490-CB290-E1000 Cree Inc. 2.5mw; coloraqua blue; 3.3-3.7v; super bright ingan led
C400-MB290-E400 Cree Inc. 12.0mw; coloruv; 3.7-4.0v; mega bright ingan led
W4NXD8D-S000 Cree Inc. diameter 50.8mm; select mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C395-XB290-E400-B Cree Inc. 16.0mw; coloruv; 3.7-4.0v; xbright ingan led
C460-XB290-E1000-B Cree Inc. 14.0mw; colorblue; 3.7-4.0v; xbright ingan led
W4NXE4C-LD00 Cree Inc. diameter 76.2mm; low micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C505-UB290-E1000 Cree Inc. 3.5mw; colorgreen; 3.5-3.9v; ultra bright ingan led
C505-CB290-E1000 Cree Inc. 2.0mw; colorgreen; 3.3-3.7v; super bright ingan led
W6NRE0X-0000 Cree Inc. diameter 76.2mm; lcw type; 6h-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
W4NRD0X-0000 Cree Inc. diameter 50.8mm; lcw substrates; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
W4NXE8C-LD00 Cree Inc. diameter 76.2mm; low micropipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, iii-v nitride deposition
C460-UB290-E1000 Cree Inc. 5.5mw; colordeep blue; 3.5-3.9v; ultra bright ingan led
C525-CB230-E1000 Cree Inc. 0.650w; colorgreen; 3.7v; low current ingan led
C470-UB291-E1000 Cree Inc. 5.0mw; colorblue; 3.5-3.9v; ultra bright ingan led
C527-XB290-E1000-B Cree Inc. 9.0mw; colorgreen; 3.8-4.0v; xbright ingan led
C395-MB290-E400 Cree Inc. 11.0mw; coloruv; 3.7-4.0v; mega bright ingan led
CSD10060B Cree Inc. 600v; 10a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control
C450-CB290-E1000 Cree Inc. 3.5mw; colordeep blue; 3.3-3.7v; super bright ingan led
C470-XB290-E1000-A Cree Inc. 14.0mw; colorblue; 3.7-4.0v; xbright ingan led
CSD01060A Cree Inc. 600v; 1a; zero recovery rectifier. for switch mode power supplies, power factor correction, motor control

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