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BZX84C15 Rectron Semiconductor surface mount zener diode. zener voltage vz = 13.80(min), vz = 15.60v(max) at iz = 5ma.
MP3510 Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 1000v, max rms bridge input voltage 700v, max dc blocking voltage 1000v. max average forward output current 35.0a at tc=55degc.
FR301 Rectron Semiconductor fast recovery rectifier. maxvrrm = 50v, maxvrms = 35v, maxvdc = 50v. current 3.0a.
TFMCJ64A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 71.1v to 78.6v. 1500w peak power, 1.0w steady state. for bidirectional use ca suffix.
VR60 Rectron Semiconductor varistor silicon rectifier. max average forward rectified current 0.5a.
TFMAJ110A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 122v to 135v. 400w peak power, 1.0w steady state. for bidirectional use ca suffix.
SR330 Rectron Semiconductor schottky barrier rectifier. max recurrent peak reverse voltage 30v, max rms voltage 21v, max dc blocking voltage 30v. max average forward recftified current 3.0a at 9.5mm lead length.
1.5KE39 Rectron Semiconductor gpp transient voltage suppressor (tvs diode). 1500w peak power, 5.0w steady state. breakdown voltage 35.1v(min), 42.9v(max). for bidirectional use c or ca suffix.
MDA202G Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 200v, max rms bridge input voltage 140v, max dc blocking voltage 200v. max average forward output current 2.0a at ta=50degc.
RB152 Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 100v, max rms bridge input voltage 70v, max dc blocking voltage 100v. max average forward rectified current 1.5a at ta=25degc.
P4KE150 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 135v to 165v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
SM5819 Rectron Semiconductor surface mount schottky barrier rectifier. max recurrent peak reverse voltage 40v, max rms voltage 28v, max dc blocking voltage 40v. max average forward recftified current 1.0a at ta=90degc
TFMBJ33A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 36.7v to 40.6v. 600w peak power, 1.0w steady state. for bidirectional use ca suffix.
FM305 Rectron Semiconductor surface mount glass passivated silicon rectifier. maxvrrm = 600v, maxvrms = 420v, maxvdc = 600v. current 3.0a.
CMBZ5234B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 6.2v at iz = 20ma.
CMBZ5239B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 9.1v at iz = 20ma.
BAS19 Rectron Semiconductor surface mount diode. reverse voltage vrrm = 100v.
RS407M Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 1000v, max rms bridge input voltage 700v, max dc blocking voltage 1000v. max average forward output current 4.0a at tc=100degc
ZMM5226B Rectron Semiconductor 5% zener diode. power dissipation 500 mw. zener voltage vz=3.3v at izt=20ma.
1A4G Rectron Semiconductor glass passivated junction silicon rectifier. current 1.0a, vrrm = 400v, vrms = 280v, vdc = 400v.
TFMAJ8.5 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 9.44v to 11.5v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
HVM14 Rectron Semiconductor high voltage assemblied rectifier. max recurrent peak reverse voltage 14kv, max rms voltage 9.8kv, max dc blocking voltage 14kv. max average forward recttified current 0.35a at 50degrec.
1.5KE20 Rectron Semiconductor gpp transient voltage suppressor (tvs diode). 1500w peak power, 5.0w steady state. breakdown voltage 18.0v(min), 22.0v(max). for bidirectional use c or ca suffix.
6A8 Rectron Semiconductor silicon rectifier. gurrent 6.0 amps. vrrm = 800v, vrms = 560v, vdc = 800v
1.5KE7.5A Rectron Semiconductor gpp transient voltage suppressor (tvs diode). 1500w peak power, 5.0w steady state. breakdown voltage 7.13v(min), 7.88v(max). for bidirectional use c or ca suffix.
FM330 Rectron Semiconductor surface mount schottky barrier rectifier. maxvrrm = 30v, maxvrms = 21v, maxvdc = 30v. current 3.0a.
FR606 Rectron Semiconductor fast recovery rectifier. maxvrrm = 800v, maxvrms = 560v, maxvdc = 800v. current 6.0a.
MP1505 Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 50v, max rms bridge input voltage 35v, max dc blocking voltage 50v. max average forward output current 15.0a at tc=55degc.
MB354 Rectron Semiconductor single-phase silicon bridge rectifier. max recurrent peak reverse voltage 400v, max rms bridge input voltage 280v, max dc blocking voltage 400v. max average forward rectified output current 35a at tc=55degc.
ZMM5250B Rectron Semiconductor 5% zener diode. power dissipation 500 mw. zener voltage vz=20v at izt=6.2ma.
MM4150 Rectron Semiconductor 1n4150 single diode. min breakdown voltage bv=75v
DL4747A Rectron Semiconductor surface mount zener diode. zener voltage vz = 20v at izt = 12.5ma.
TFMBJ40A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 44.4v to 49.1v. 600w peak power, 1.0w steady state. for bidirectional use ca suffix.
1.5FMCJ160 Rectron Semiconductor surface mount transient voltage suppressor (tvs). 1500w peak power, 5.0w steady state. breakdown voltage 144v(min), 176v(max). for bidirectional use c or ca suffix.
TFMAJ20 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 22.2v to 27.1v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
1.5FMCJ91 Rectron Semiconductor surface mount transient voltage suppressor (tvs). 1500w peak power, 5.0w steady state. breakdown voltage 81.9v(min), 100v(max). for bidirectional use c or ca suffix.
EFM306 Rectron Semiconductor surface mount glass passivated super fast silicon rectifier. maxvrrm = 400v, maxvrms = 280v, maxvdc = 400v. current 3.0a.
TFMAJ7.0 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 7.78v to 9.51v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
CMBZ5231B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 5.1v at iz = 20ma.
P6KE13A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 12.4v to 13.7v. 600w peak power, 1.0w steady state. for bidirectional use ca suffix.
P6KE62A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 58.9v to 65.1v. 600w peak power, 1.0w steady state. for bidirectional use ca suffix.
RS601 Rectron Semiconductor single-phase silicon bridge rectifier. max recurrent peak reverse voltage 50v, max rms bridge input voltage 35v, max dc blocking voltage 50v. max average forward output current 6.0a at tc=75degc
5KP9.0A Rectron Semiconductor gpp transient voltage suppressor(tvs) . 5000w peak power, 5.0w steady state. vbr=10.0v(min), vbr=15.0v(max) @it=5.0ma. for bidirectional use c or ca suffix.
TFMBJ15A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 16.7v to 18.5v. 600w peak power, 1.0w steady state. for bidirectional use ca suffix.
5KP75A Rectron Semiconductor gpp transient voltage suppressor(tvs) . 5000w peak power, 5.0w steady state. vbr=83.3v(min), vbr=92.1v(max) @it=5.0ma. for bidirectional use c or ca suffix.
CMBZ5259B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 39v at iz = 3.2ma.
BZX84C27 Rectron Semiconductor surface mount zener diode. zener voltage vz = 25.10(min), vz = 28.90v(max) at iz = 2ma.
P4FMAJ130 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 117v to 143v. 400w peak power, 1.0w steady stat. for bidirectional use c or ca suffixs (ex. p4fmaj6.8c, p4fmaj400ca)
RC205 Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 600v, max rms bridge input voltage 420v, max dc blocking voltage 600v. max average forward rectified current 2.0a at ta=25degc.
1.5FMCJ27 Rectron Semiconductor surface mount transient voltage suppressor (tvs). 1500w peak power, 5.0w steady state. breakdown voltage 24.3v(min), 29.7v(max). for bidirectional use c or ca suffix.
P4KE11A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 10.5v to 11.6v. 400w peak power, 1.0w steady stat. for bidirectional use ca suffix.
TFMAJ8.0 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 8.89v to 10.9v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
1.5FMCJ120A Rectron Semiconductor surface mount transient voltage suppressor (tvs). 1500w peak power, 5.0w steady state. breakdown voltage 114v(min), 126v(max). for bidirectional use c or ca suffix.
SR5045C Rectron Semiconductor schottky barrier rectifier. max recurrent peak reverse voltage 45v, max rms voltage 32v, max dc blocking voltage 45v. max average forward recftified current 50.0a at derating case temperature
1N4937G Rectron Semiconductor fast recovery glass passivated rectifier. vrrm = 600v. vrms = 420v. vdc = 600v. current 1.0a
MB3505 Rectron Semiconductor single-phase silicon bridge rectifier. max recurrent peak reverse voltage 50v, max rms bridge input voltage 35v, max dc blocking voltage 50v. max average forward rectified output current 35a at tc=55degc.
P6FMBJ51A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 48.5v to 53.6v. 600w peak power, 1.0w steady stat. for bidirectional use ca suffix
P6KE300 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 270v to 330v. 600w peak power, 1.0w steady state. for bidirectional use c suffix.
TFMCJ24A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 26.7v to 29.5v. 1500w peak power, 1.0w steady state. for bidirectional use ca suffix.
CMBZ5243B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 13v at iz = 9.5ma.
MB151 Rectron Semiconductor single-phase silicon bridge rectifier. max recurrent peak reverse voltage 100v, max rms bridge input voltage 70v, max dc blocking voltage 100v. max average forward rectified output current 15a at tc=55degc.
DL4740A Rectron Semiconductor surface mount zener diode. zener voltage vz = 10v at izt = 25ma.
SF23 Rectron Semiconductor glass passivated super fast rectifier. max recurrent peak reverse voltage 150v, max rms voltage 105v, max dc blocking voltage 150v. max average forward current 2.0a at ta=55degc
TFMAJ12 Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 13.3v to 16.3v. 400w peak power, 1.0w steady state. for bidirectional use c suffix.
HER504 Rectron Semiconductor high efficiency rectifier. max recurrent peak reverse voltage 300v, max rms voltage 210v, max dc blocking voltage 300v. max average forward recttified current 5.0a at 50degrec.
FR601 Rectron Semiconductor fast recovery rectifier. maxvrrm = 50v, maxvrms = 35v, maxvdc = 50v. current 6.0a.
P4FMAJ220A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 209v to 231v. 400w peak power, 1.0w steady stat. for bidirectional use c or ca suffixs (ex. p4fmaj6.8c, p4fmaj400ca)
BR1010 Rectron Semiconductor single-phase silicon bridge rectifier. vrrm = 1000v, vrms = 700v, vdc = 1000v. current 10a.
RL1N4007 Rectron Semiconductor silicon rectifier. max recurrent peak reverse voltage 1000v, max rms voltage 700v, max dc blocking voltage 1000v. max average forward current 1.0a at ta=55degc.
RS604M Rectron Semiconductor single-phase silicon bridge rectifier. max recurrent peak reverse voltage 400v, max rms bridge input voltage 280v, max dc blocking voltage 400v. max average forward rectified output current 6.0a at tc=100degc
1N4942 Rectron Semiconductor fast recovery rectifier. vrrm = 200v. vrms = 140v. vdc = 200v. current 1.0a
SR6020C Rectron Semiconductor schottky barrier rectifier. max recurrent peak reverse voltage 20v, max rms voltage 14v, max dc blocking voltage 20v. max average forward recftified current 60.0a at derating case temperature
MD7S Rectron Semiconductor single-phase glass passivated mini silicon surface mount bridge rectifier. max recurrent peak reverse voltage 1000v, max rms bridge input voltage 700v, max dc blocking voltage 1000v. max io=0.5a(on glass-epoxy pcb), io=0.8a(on al. substr.) ta=30degc.
W04L Rectron Semiconductor single-phase glass passivated silicon bridge rectifier. max recurrent peak reverse voltage 400v, max rms bridge input voltage 280v, max dc blocking voltage 400v. max average forward rectified output current 1.5a at ta=50degc.
CMBZ5233B Rectron Semiconductor 5% surface mount zener diode. zener voltage vz = 6.0v at iz = 20ma.
P4KE100A Rectron Semiconductor gpp transient voltage suppressor. breakdown voltage 95.0v to 105v. 400w peak power, 1.0w steady state. for bidirectional use ca suffix.

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