Path: Datasheet PDF > Electronic Component Datasheet > Samsung Semiconductor, Inc. Datasheets > Samsung 1

Samsung Semiconductor, Inc.Datasheet PDF For 

Samsung DatasheetPDF found 1 PDF documents matching your query:

KM44V1000DT-7 Samsung Semiconductor, Inc. 1m x 4bit cmos dynamic ram with fast page mode, 3.3v, 70ns
K6R1008C1B-TC8 Samsung Semiconductor, Inc. 128k x 8 high speed static ram, 5v operating, 8ns
K4S643232E-TL50 Samsung Semiconductor, Inc. 512k x 32bit x 4 banks synchronous dram lvttl, 3.3v, 200mhz
SSS3N70 Samsung Semiconductor, Inc. n-channel power mosfet, 1.8a, 700v
KM416V4004CS-L45 Samsung Semiconductor, Inc. 4m x 16bit cmos dynamic ram with extended data out, 3.3v power supply, 45ns, low power
K6T4008U1C-TF70 Samsung Semiconductor, Inc. 512kx8 bit low voltage cmos static ram, vcc range=2.7-3.3v, 70ns, ll-power
KM684000BLG-7L Samsung Semiconductor, Inc. 512kx8 bit cmos static ram, 70ns, low power
KS58015D Samsung Semiconductor, Inc. dtmf dialer for binary data-in
K4E661612B-TC50 Samsung Semiconductor, Inc. 4m x 16bit cmos dynamic ram with extended data out, 3.3v power supply, 50ns
KM48V8104BK-45 Samsung Semiconductor, Inc. 8m x 8bit cmos dynamic ram with extended data out, 45ns
KM44C1000DT-6 Samsung Semiconductor, Inc. 1m x 4bit cmos dynamic ram with fast page mode, 5v, 60ns
KM44C4003CS-6 Samsung Semiconductor, Inc. 4m x 4bit cmos quad cas dram with fast page mode, 5v, 60ns
KM48S8030DT-G/FA Samsung Semiconductor, Inc. 2m x 8bit x 4 banks synchronous dram, 3.3v power supply, lvttl, 133mhz
KM44S3203BT-G/FL Samsung Semiconductor, Inc. 8m x 4bit x 4 banks synchronous dram lvttl. max freq. 100 mhz (cl=3).
KS86P4208 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller. otp version.
KM68512BLTI-7L Samsung Semiconductor, Inc. 64k x 8 bit cmos static ram, 70ns, low low power
K4E171612D-T Samsung Semiconductor, Inc. 1m x 16 bit cmos dynamic ram with extended data out. supply voltage 3.3v, 4k refresh cycle.
KM416V256DT-6 Samsung Semiconductor, Inc. 256k x 16bit cmos dynamic ram with fast page mode, 60ns, 3.3v
KS88C4708 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
KS58555B Samsung Semiconductor, Inc. universal 15 memory dialer
S3C80B5 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
MJD127 Samsung Semiconductor, Inc. pnp darlington transistor for high dc current gain, 100v, 8a
KM416V1204BJ-6 Samsung Semiconductor, Inc. 3.3v, 1m x 16 bit cmos dram with extended data out, 60ns
KA2131 Samsung Semiconductor, Inc. dc volume, tone control circuit
KM681000BLGI-7 Samsung Semiconductor, Inc. 128k x 8 bit cmos static ram, 70ns, low power
KM416V1000BJ-5 Samsung Semiconductor, Inc. 1m x 16bit cmos dynamic ram with fast page mode, 3.3v, 50ns
K6R1008C1B-JC10 Samsung Semiconductor, Inc. 128k x 8 high speed static ram, 5v operating, 10ns
K4E640412D-TC/L Samsung Semiconductor, Inc. 16m x 4 bit cmos dynamic ram with extended data out. 3.3v, 4k refresh cycle.
S1D2511B01-A0B0 Samsung Semiconductor, Inc. deflection processor for multisync monitors
KS88P01416 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller. otp version.
K9F1G16Q0M-PCB0 Samsung Semiconductor, Inc. 64m x 16 bit nand flash memory, 1.70 - 1.95v
K6T0808C1D-RL55 Samsung Semiconductor, Inc. 55ns, 32kx8 bit low power cmos static ram
IRF9531 Samsung Semiconductor, Inc. p-channel mosfet, 60v, 12a
K4S560832D-TC/L75 Samsung Semiconductor, Inc. 8m x 8bit x 4 banks synchronous dram lvttl, 133mhz
KM684000CLP-5L Samsung Semiconductor, Inc. 512kx8 bit cmos static ram, 55ns, low power
K4S280832C-TC/L1H Samsung Semiconductor, Inc. 4m x 8bit x 4 banks synchronous dram. 100 mhz max freq (cl=2). interface lvttl
IRFP251 Samsung Semiconductor, Inc. n-channel power mosfet, 150v, 30a
S524AD0XF1 Samsung Semiconductor, Inc. 256k-bit serial eeprom for low power.
KM416V1200BJ-6 Samsung Semiconductor, Inc. 1m x 16bit cmos dynamic ram with fast page mode, 3.3v, 60ns
K9F1208Q0A-HCB0 Samsung Semiconductor, Inc. 64m x 8 bit nand flash memory, 1.70 - 1.95v
K6T4008C1C-DL70 Samsung Semiconductor, Inc. 512kx8 bit cmos static ram, vcc range=4.5-5.5v, 70ns, l-power
S3C7538 Samsung Semiconductor, Inc. single-chip cmos microcontroller, 768 x 4-bit ram, 8,192 x 8-bit rom
KS24C011CT Samsung Semiconductor, Inc. 128 x 8-bit serial eeprom
KM48V2100BSL-5 Samsung Semiconductor, Inc. 2m x 8bit cmos dynamic ram with fast page mode, 3.3v, 50ns
K4S560432A-TC/L1H Samsung Semiconductor, Inc. 16m x 4bit x 4 banks synchronous dram lvttl. 256 mbit sdram. max freq. 100 mhz (cl=2), interface lvttl.
KM416S8030BT-G/FL Samsung Semiconductor, Inc. 2m x 16bit x 4 banks synchronous dram lvttl. 128 mbit sdram. max freq. 100 mhz (cl=3)
K9F2808Q0C-DCB0 Samsung Semiconductor, Inc. 16m x 8 bit nand flash memory, 1.7 - 1.95v
K9F1208U0A-HCB0 Samsung Semiconductor, Inc. 64m x 8 bit nand flash memory, 2.7 - 3.6v
K4E640812C-JCL-6 Samsung Semiconductor, Inc. 8m x 8bit cmos dynamic ram with extended data out, 60ns
KS88C01524 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
K4F170411D-B Samsung Semiconductor, Inc. 4m x 4 bit cmos dynamic ram with fast page mode. supply voltage 5v, 4k refresh cycle.
S3C8478 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
KM41V4000DLJ-7 Samsung Semiconductor, Inc. 4m x 1bit cmos dynamic ram with fast page mode, 3.3v, 128ms refresh, 70ns
KM416C1204BT-45 Samsung Semiconductor, Inc. 5v, 1m x 16 bit cmos dram with extended data out, 45ns
K4R881869M-NCG6 Samsung Semiconductor, Inc. 512k x 18 x 32s dependent banks direct rdram. access time 53.3 ns, i/o freq. 600 mhz.
KM44C4003CSL-5 Samsung Semiconductor, Inc. 4m x 4bit cmos quad cas dram with fast page mode, 5v, 50ns
K4S640832E-TC1L Samsung Semiconductor, Inc. 64mb synchronous dram, 3.3v, lvttl interface, 100mhz
S6B2104 Samsung Semiconductor, Inc. 80 channel segment driver for dot matrix lcd
K4S641632D-TC/L60 Samsung Semiconductor, Inc. 1m x 16bit x 4 banks synchronous dram lvttl. 64 mbit sdram. max freq. 166 mhz (cl=3), interface lvttl.
K4E660812C-JC-6 Samsung Semiconductor, Inc. 8m x 8bit cmos dynamic ram with extended data out, 60ns
KA2655D Samsung Semiconductor, Inc. linear integrated circuit. input level dtl, ttl, pmos, cmos
KS86C4004 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
K4S560432E-NCL75 Samsung Semiconductor, Inc. 64m x 4 sdram, lvttl, 133mhz
KM681002BTI-12 Samsung Semiconductor, Inc. 128k x 8 high speed static ram, 5v operating, 12ns
KM416C254DJL-5 Samsung Semiconductor, Inc. 256k x 16bit cmos dynamic ram with extended data out, vcc=5.0v, 50ns, self-refresh
K6T4008C1B-DL70 Samsung Semiconductor, Inc. 512kx8 bit cmos static ram, vcc range=4.5-5.5v, 70ns, l-power
KM44C1000DTL-5 Samsung Semiconductor, Inc. 1m x 4bit cmos dynamic ram with fast page mode, 5v, 50ns
IRF721 Samsung Semiconductor, Inc. n-channel mosfet, 350v, 3.3a
S3C9424 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller.
K6R1008C1A-TI15 Samsung Semiconductor, Inc. 128k x 8 high speed static ram, 5v operating, 15ns
K4S641632D-TC/L70 Samsung Semiconductor, Inc. 1m x 16bit x 4 banks synchronous dram lvttl. 64 mbit sdram. max freq. 143 mhz (cl=3), interface lvttl.
K4S640832E-TC1H Samsung Semiconductor, Inc. 64mb synchronous dram, 3.3v, lvttl interface, 100mhz
S524C80D40 Samsung Semiconductor, Inc. 4k-bit serial eeprom with software write protect.
KS86C4204 Samsung Semiconductor, Inc. 8-bit single-chip cmos microcontroller. 3 v lvd
KM684000LG-8L Samsung Semiconductor, Inc. 512kx8 bit cmos static ram, 85ns, low power
K4D263238A-GC40 Samsung Semiconductor, Inc. 128mbit ddr sdram, sstl_2 interface, 250mhz

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

Search:

Google AD