Datablad PDF for K4E160812D søgeresultaterne

• Del nr.: K4E160812D

  Producent:
  Samsung semiconductor

  Temperatur:
  

  Beskrivelse:
  8Bit CMOS Dynamic with Extended Data

  PDF Størrelse: Kb PDF Sider: Page

  Købe K4E160812D

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• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
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  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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