Datablad PDF for K4R271669D-T søgeresultaterne
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Del nr.: K4R271669D-T
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128Mbit RDRAM(D-die)PDF Størrelse: Kb PDF Sider: Page
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K4R271669D-T PDF
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- K4R271669A SAMSUNG[Samsung semiconductor]
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-N(M)CK7 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-N(M)CK8 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-NB(M)CCG6 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-NBMCCG6 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-NMCK7 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-NMCK8 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669AM-CG6 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R271669AM-CK7 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R271669AM-CK8 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R271669AN-CG6 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq 600 MHz. - K4R271669AN-CK7 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R271669AN-CK8 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R271669B SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R271669B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM
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