PDF-Datenblatt für 2N6306 Suchergebnisse
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Art-Nr: 2N6306
Hersteller:
CENTRAL[Central Semiconductor Corp]Temperatur:
Beschreibung:
SILICON TRANSISTORPDF Größe: Kb PDF-Seiten: Page
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2N6306 PDF
Verwandte Bestell-Nr
- 2N630
TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3 - 2N6300 MICROSEMI[Microsemi Corporation]
DARLINGTON POWER SILICON TRANSISTOR - 2N6301 MICROSEMI
DARLINGTON POWER SILICON TRANSISTOR - 2N6301SMD
NPN - 2N6301SMD05
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 8A I(C) | SMT - 2N6302 SEME-LAB[Seme
Bipolar Device - 2N6303 MICROSEMI[Microsemi Corporation]
Silicon Power Transistors - 2N6304 MICROSEMI[Microsemi Corporation]
MICROWAVE DISCRETE POWER TRANSISTORS - 2N6305
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 - 2N6306 CENTRAL[Central Semiconductor Corp]
SILICON TRANSISTOR - 2N6307 CENTRAL[Central Semiconductor Corp]
SILICON TRANSISTOR - 2N6308 Microsemi Corporation
POWER SILICON TRANSISTOR - 2N6312 Boca Semiconductor Corporation
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS - 2N6313 Mospec Semiconductor
POWER TRANSISTORS(5A,75W) - 2N6314 Mospec Semiconductor
POWER TRANSISTORS(5A,75W)
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