PDF-Datenblatt für BUL642D2G Suchergebnisse
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Art-Nr: BUL642D2G
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SemiconductorTemperatur:
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High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation NetworkPDF Größe: Kb PDF-Seiten: Page
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Verwandte Bestell-Nr
- BUL642D2 Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network - BUL642D2G Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
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