PDF-Datenblatt für IRFP451FI Suchergebnisse
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Art-Nr: IRFP451FI
Hersteller:
Temperatur:
Beschreibung:
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 9A I(D) | TO-218VARPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Verwandte Bestell-Nr
- IRFP450 STMicroelectronics
CHANNEL 500V 0.33ohm TO-247 PowerMESH] MOSFET - IRFP450A International Rectifier
Power MOSFET(Vdss=500V, Rds(on)max=0.40ohm, Id=14A) - IRFP450APBF Vishay
Power MOSFET - IRFP450B Fairchild Semiconductor
500V N-Channel MOSFET - IRFP450FI
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-218VAR - IRFP450LC International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) - IRFP450LCPBF Vishay
Power MOSFET - IRFP450N International Rectifier
Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A) - IRFP450NPBF Vishay
Power MOSFET - IRFP450PBF International Rectifier
HEXFET POWER MOSFET - IRFP450R
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247 - IRFP451 SAMSUNG[Samsung semiconductor]
N-CHANNEL POWER MOSFETS - IRFP451FI
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 9A I(D) | TO-218VAR - IRFP451R
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 14A I(D) | TO-247 - IRFP452 Samsung semiconductor
N-CHANNEL POWER MOSFETS
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