PDF-Datenblatt für K4R881869M-NCK8 Suchergebnisse
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Art-Nr: K4R881869M-NCK8
Hersteller:
SAMSUNG[Samsung semiconductor]Temperatur:
Beschreibung:
288Mbit RDRAM 512K Dependent Banks Direct RDRAMTMPDF Größe: Kb PDF-Seiten: Page
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K4R881869M-NCK8 PDF
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512K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R881869M-NCK7 SAMSUNG[Samsung semiconductor]
288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM - K4R881869M-NCK8 SAMSUNG[Samsung semiconductor]
288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
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