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Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTORPDF 크기 : Kb PDF 페이지 : Page
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IRG4PC50FPBF PDF
관련 일부 지역
- IRG4PC50 IR
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A - IRG4PC50F International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) - IRG4PC50FD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) - IRG4PC50FDPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4PC50FPBF
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR - IRG4PC50K International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR - IRG4PC50KD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4PC50KDPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4PC50KPBF
Short Circuit Rated UltraFast IGBT - IRG4PC50S International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR - IRG4PC50S-P International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT - IRG4PC50SPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR - IRG4PC50U International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) - IRG4PC50UD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) - IRG4PC50UDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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