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• Część nr: BUL642D2G

  Producent:
  Semiconductor

  Temperatura:
  

  Opis:
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

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• BUL642D2 Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL642D2G Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

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