Date PDF pentru K4R881869M-NCG6 rezultatele de căutare

• Partea nr: K4R881869M-NCG6

  Producator:
  Samsung

  Temperatura:
  

  Descriere:
  512K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF Dimensiune: Kb PDF Pagini: Page

  Cumpăra K4R881869M-NCG6

DatasheetPDF găsit 1 de potrivire documentele PDF interogare:

Date de descărcare:
K4R881869M-NCG6 PDF

Legate de nici o parte

• K4R881869M SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NBCCG6 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCG6 Samsung
  512K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R881869M-NCK7 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCK8 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM

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