Технические характеристики PDF для IRF520NS результаты поиска
-
Electronic component: IRF520NS
Произв:
International RectifierТемпература:
Описание:
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)PDF Размер: Kb PDF Страниц: Page
DatasheetPDF найдено 1 PDF документы, соответствующие вашему запросу:
Технические характеристики Загрузить:
IRF520NS PDF
Похожие части нет
- IRF520 STMicroelectronics
CHANNEL ENHANCEMENT MODE POWER TRANSISTORS - IRF520A Fairchild Semiconductor
Advanced Power MOSFET - IRF520CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP - IRF520FI STMicroelectronics
CHANNEL ENHANCEMENT MODE POWER TRANSISTORS - IRF520L International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) - IRF520N International Rectifier
Power MOSFET(Vdss Rds(on) 0.20 9.7A) - IRF520NL
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-262 - IRF520NLPBF International Rectifier
Advamced {rpcess Technology Surface Mount - IRF520NPBF International Rectifier
HEXFET? Power MOSFET - IRF520NS International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) - IRF520NSPBF International Rectifier
Advamced {rpcess Technology Surface Mount - IRF520NSTRL
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB - IRF520NSTRR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB - IRF520PBF International Rectifier
HEXFET Power MOSFET - IRF520R
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | TO-220AB
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam