Таблични пдф за K4E170812D-B резултате претраживања
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Део Бр: K4E170812D-B
Производјач:
SamsungТемпература:
Опис:
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.ПДФ Величина датотеке: Kb ПДФ Резултати: Page
ДатасхеетПДФ пронашао 1 ПДФ докумената који одговарају вашем упиту:
Таблични Доунлоад:
K4E170812D-B PDF
Сродне део не
- K4E170811D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E170811D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170811D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170812D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E170812D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E170812D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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