Datablad PDF För K4R441869AN-CG6 Sökresultat

• Del nr: K4R441869AN-CG6

  Tillverkare:
  Samsung

  Temperatur:
  

  Beskrivning:
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF Storlek: Kb PDF: Page

  Köpa K4R441869AN-CG6

DatasheetPDF hittade 1 PDF-dokument som matchar din sökning:

Datablad Download:
K4R441869AN-CG6 PDF

Liknande Del nr

• K4R441869A SAMSUNG[Samsung semiconductor]
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CG6 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK7 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK8 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCG6 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK7 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK8 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869AM-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AM-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AM-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.
• K4R441869AN-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AN-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AN-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam