Специфікацію PDF для D1001UK результати пошуку

• Частина Ні: D1001UK

  Виробник:
  SEME-LAB[Seme

  Температура:
  

  Опис:
  GOLD METALLISED MULTI-PURPOSE SILICON DMOS 175MHz SINGLE ENDED

  PDF Розмір: Kb PDF Сторінки: Page

  Купувати D1001UK

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Пов'язані сторона не має

• D100 MicroPower
  Single Dual Output Miniature, DC/DC Converters
• D100/04 Usha
  Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 400V, Vrsm = 500V.
• D100/06 Usha
  Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 600V, Vrsm = 700V.
• D100/08 Usha
  Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 800V, Vrsm = 900V.
• D100/12 Usha
  Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1200V, Vrsm = 1300V.
• D100/16 Usha
  Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1600V, Vrsm = 1600V.
• D1001UK SEME-LAB[Seme
  GOLD METALLISED MULTI-PURPOSE SILICON DMOS 175MHz SINGLE ENDED
• D10029EJ1V0DS00
  From datasheet system
• D1002UK Seme
  METAL GATE SILICON
• D10030EJ1V0DS00
  From datasheet system
• D10031EJ1V0DS00
  From datasheet system
• D1003UK SEME-LAB[Seme
  METAL GATE SILICON
• D1004 SEME-LAB[Seme
  METAL GATE SILICON
• D10040180GT PREMIER DEVICES, INC.
  GaAs Power Doubler, 1000MHz, 19.0dB min. Gain 1GHz, 375mA max. 24VDC
• D10040180GTH PREMIER DEVICES, INC.
  GaAs Power Doubler, 1000MHz, 19.0dB min. Gain 1GHz, 440mA max. 24VDC

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