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Datasheets PDF for CREE, INC

CREE, INC PDF Data Sheet,Cree Datasheet List

  • W4NXD8C-S000 CREE, INC Diameter 50.8mm; Select Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C470-XB900-B CREE, INC 150mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • W6NXD3K-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C460-CB290-E1000 CREE, INC 3.0mw; Colordeep Blue; 3.3-3.7v; Super Bright Ingan Led
  • W4NXD8D-0000 CREE, INC Diameter 50.8mm; Standatd Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C405-XB900-B CREE, INC 250mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • C450-CB290-E1000 CREE, INC 3.5mw; Colordeep Blue; 3.3-3.7v; Super Bright Ingan Led
  • W4SRD0R-0D00 CREE, INC Diameter 50.8mm; Semi-Insulating; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W4NXD8C-L000 CREE, INC Diameter 50.8mm; Low Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C460-CB230-E1000 CREE, INC 1.3w; Colordeep Blue; 3.7v; Low Current Ingan Led
  • W6PXD3O-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C405-XB290-E400-A CREE, INC 17.0mw; Coloruv; 3.7-4.0v; Xbright Ingan Led
  • W4SRD8R-0D00 CREE, INC Diameter 50.8mm; Semi-Insulating; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C470-UB290-E1000 CREE, INC 5.0mw; Colorblue; 3.5-3.9v; Ultra Bright Ingan Led
  • CXXX-MB290-E400 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • W6NRD0X-0000 CREE, INC Diameter 50.8mm; Lcw Type; 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • CRF-22010-101 CREE, INC 62.5mw; 120vdc; Sic Rf Power Mesfet. For Class A,Ab Amplifiers; Tdma, Edge, Cdma, W-Cdma, Broadband Amplifiers, Catv Amplifiers, Mmds
  • W4NXD8C-0000 CREE, INC Diameter 50.8mm; Standatd Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • CXXX-CB230-E1000 CREE, INC 5v; 125ma; Super Bright Led. For Communication Handsets, Backlighting, High Resolution Video Displays
  • C470-CB290-E1000 CREE, INC 2.5mw; Colorblue; 3.3-3.7v; Super Bright Ingan Led
  • C525-CB290-E1000 CREE, INC 1.5mw; Colorgreen; 3.3-3.7v; Super Bright Ingan Led
  • C430-UB290-E1000 CREE, INC 2.0mw; 30ma; Super Bright Led For Full Color Displays & Moving Message Signs
  • C525-UB290-E1000 CREE, INC 3.0mw; Colorgreen; 3.5-3.9v; Ultra Bright Ingan Led
  • C505-XB290-E1000-B CREE, INC 11.0mw; Colorgreen; 3.8-4.0v; Xbright Ingan Led
  • W4NXE4C-0D00 CREE, INC Diameter 76.2mm; Standard Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C460-MB290-E1000 CREE, INC 11.0mw; Colordeep Blue; 3.7-4.0v; Mega Bright Ingan Led
  • CRF-22010-TB CREE, INC 50vdc ;66w; Evaluation Board For Crf-22010 Version A (Narrowband)
  • CXXX-MB290-E1000 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • W4NXE8C-0D00 CREE, INC Diameter 76.2mm; Standard Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C430-CB290-E1000 CREE, INC 1150uw; 30ma; Super Bright Led For Full Color Displays & Moving Message Signs
  • C395-XB290-E400-A CREE, INC 16.0mw; Coloruv; 3.7-4.0v; Xbright Ingan Led
  • CXXX-CB290-S0100 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • W6NXD0KLSR-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C405-MB290-E400 CREE, INC 12.0mw; Coloruv; 3.7-4.0v; Mega Bright Ingan Led
  • C400-MB290-E400 CREE, INC 12.0mw; Coloruv; 3.7-4.0v; Mega Bright Ingan Led
  • W4NXD8D-S000 CREE, INC Diameter 50.8mm; Select Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C395-XB290-E400-B CREE, INC 16.0mw; Coloruv; 3.7-4.0v; Xbright Ingan Led
  • C505-UB290-E1000 CREE, INC 3.5mw; Colorgreen; 3.5-3.9v; Ultra Bright Ingan Led
  • C470-UB291-E1000 CREE, INC 5.0mw; Colorblue; 3.5-3.9v; Ultra Bright Ingan Led
  • CXXX-UB29X-S0100 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • C405-XB290-E400-B CREE, INC 17.0mw; Coloruv; 3.7-4.0v; Xbright Ingan Led
  • C505-CB290-E1000 CREE, INC 2.0mw; Colorgreen; 3.3-3.7v; Super Bright Ingan Led
  • C527-XB290-E1000-B CREE, INC 9.0mw; Colorgreen; 3.8-4.0v; Xbright Ingan Led
  • C395-MB290-E400 CREE, INC 11.0mw; Coloruv; 3.7-4.0v; Mega Bright Ingan Led
  • W4NRD0X-0000 CREE, INC Diameter 50.8mm; Lcw Substrates; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W6NXD3L-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C470-CB230-E1000 CREE, INC 1.3w; Colordeep Blue; 3.7v; Low Current Ingan Led
  • C490-UB290-E1000 CREE, INC 4.8mw; Coloraqua Blue; 3.5-3.9v; Ultra Bright Ingan Led
  • W4TRD8R-0D00 CREE, INC Diameter 50.8mm; Semi-Insulating; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C527-XB290-E1000-A CREE, INC 9.0mw; Colorgreen; 3.8-4.0v; Xbright Ingan Led
  • CXXX-UB290-S1000 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • C460-XB290-E1000-B CREE, INC 14.0mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • W4NXE8C-LD00 CREE, INC Diameter 76.2mm; Low Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C470-MB290-E1000 CREE, INC 10.0mw; Colorblue; 3.7-4.0v; Mega Bright Ingan Led
  • C470-XB290-E1000-A CREE, INC 14.0mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • W4NXE8C-SD00 CREE, INC Diameter 76.2mm; Select Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C503-MB290-E1000 CREE, INC 8.0mw; Colorgreen; 3.7-4.0v; Mega Bright Ingan Led
  • CXXX-MB290-S0100 CREE, INC 5v; 30ma; Super Bright Led. For Outdoor Led Video Displays, Automative Dashboard Lighting, White Leds, Backlighting
  • C460-UB290-E1000 CREE, INC 5.5mw; Colordeep Blue; 3.5-3.9v; Ultra Bright Ingan Led
  • W4NRD8C-U000 CREE, INC Diameter 50.8mm; Ultra-Low Mircopipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C460-XB290-E1000-A CREE, INC 15.0mw; Colordeep Blue; 3.7-4.0v; Xbright Ingan Led
  • C405-XB900-A CREE, INC 250mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • CRF-22010-001 CREE, INC 62.5mw; 120vdc; Sic Rf Power Mesfet. For Class A,Ab Amplifiers; Tdma, Edge, Cdma, W-Cdma, Broadband Amplifiers, Catv Amplifiers, Mmds
  • W4NXE4C-SD00 CREE, INC Diameter 76.2mm; Select Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C527-MB290-E1000 CREE, INC 7.0mw; Colorgreen; 3.7-4.0v; Mega Bright Ingan Led
  • W4TRD0R-0D00 CREE, INC Diameter 50.8mm; Semi-Insulating; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C490-CB290-E1000 CREE, INC 2.5mw; Coloraqua Blue; 3.3-3.7v; Super Bright Ingan Led
  • C525-CB230-E1000 CREE, INC 0.650w; Colorgreen; 3.7v; Low Current Ingan Led
  • W4NXE4C-LD00 CREE, INC Diameter 76.2mm; Low Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W6NXD3J-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W6NXD0K-0000 CREE, INC Diameter 50.8mm; Lsemi-Insulating (Prototype); 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • C470-XB900-A CREE, INC 150mw; Colorblue; 3.7-4.0v; Xbright Ingan Led
  • C505-XB290-E1000-A CREE, INC 11.0mw; Colorgreen; 3.8-4.0v; Xbright Ingan Led
  • W4NRE0X-0D00 CREE, INC Diameter 76.2mm; Standard Micropipe Density; Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W4TXE0X-0D00 CREE, INC Diameter 76.2mm; Lsemi-Insulating (Prototype); Silicon Carbide Substrates. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition
  • W6NRE0X-0000 CREE, INC Diameter 76.2mm; Lcw Type; 6h-Silicon Carbide. For High Frequency Power Devices, High Power Devices, High Temperature Devices, Optoelectronic Devices, Iii-V Nitride Deposition

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