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مسار: Datasheet PDF > اشباه الموصلات الصانع > IRG4BC10SD-S > IRG4BC10SD-S Datasheet

Datasheet PDF ل=== IRG4BC10SD-S نتائج البحث

  • الجزء رقم : IRG4BC10SD-S

    الصانع :
    International Rectifier

    درجة الحراره :

    الوصف :
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

    PDF الحجم : Kb PDF صفحات : Page

    يشتري IRG4BC10SD-S

DatasheetPDF العثور على وثائق PDF 1 مطابقه الاستفسار :

Datasheet تحميل :
IRG4BC10SD-S PDF

ذات الصلة جزءا لا

  • IRG4BC10K International Rectifier
    Short Circuit Rated UltraFast IGBT
  • IRG4BC10KD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
  • IRG4BC10KDPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10S International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-L International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD-LPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-S International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD-SPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-STRL
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
  • IRG4BC10SD-STRR
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
  • IRG4BC10SDPBF
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SPBF International
    INSULATED GATE BIPOLAR TRANSISTOR
  • IRG4BC10UD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
  • IRG4BC10UDPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT

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