Datasheet PDF За 2SD2607 резултатите от търсенето
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Част No: 2SD2607
Производител:
Toshiba SemiconductorТемпература:
Описание:
POWER AMPLIFICATION (100V,PDF Размер: Kb PDF Страници: Page
DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:
Datasheet Изтегли:
2SD2607 PDF
Свързани част не
- 2SD200
TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR HORIZONTAL OUTPUT APPLICATIONS) - 2SD2000 Matsshita Panasonic
Power Transistors - 2SD2000O
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000P
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000Q
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000R
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2004 Rohm
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE - 2SD2004N
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2004P
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2004Q
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2005 ROHM[Rohm]
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE - 2SD2005P
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2005Q
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2005R
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2006 ROHM
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE
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