Datasheet PDF За GT10J321 резултатите от търсенето

• Част No: GT10J321

  Производител:
  Toshiba Semiconductor

  Температура:
  

  Описание:
  TOSHIBA Insulated Gate Bipolar Transistor Silicon Chanenel IGBT

  PDF Размер: Kb PDF Страници: Page

  Купувам GT10J321

DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:

Datasheet Изтегли:
GT10J321 PDF

Свързани част не

• GT10J301 Toshiba Semiconductor
  CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
• GT10J30106 Toshiba Semiconductor
  HIGH POWER SWITCHING APPLICATIONS
• GT10J301_06 Toshiba Semiconductor
  HIGH POWER SWITCHING APPLICATIONS
• GT10J303 Toshiba
  HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
• GT10J30306 Toshiba Semiconductor
  SILICON CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
• GT10J303_06 Toshiba Semiconductor
  SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
• GT10J311 Toshiba Semiconductor
  CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
• GT10J312 Toshiba
  HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
• GT10J312(SM) Toshiba Semiconductor
  N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
• GT10J31206 Toshiba Semiconductor
  SILICON CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
• GT10J312SM Toshiba Semiconductor
  CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
• GT10J312_06 Toshiba Semiconductor
  SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
• GT10J321 Toshiba Semiconductor
  TOSHIBA Insulated Gate Bipolar Transistor Silicon Chanenel IGBT
• GT10J32106 Toshiba Semiconductor
  Silicon Channel IGBT High Power Switching Applications
• GT10J321_06 Toshiba Semiconductor
  Silicon N Channel IGBT High Power Switching Applications

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