电子元器件 28LV64SI-6 PDF资料

• 型号： 28LV64SI-6

  生产厂家：
  Turbo-IC

  耐温：
  

  功能描述：
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.

  PDF文件大小： Kb PDF页数： Page

  买 28LV64SI-6

具体资料功能参数数据：

Datasheet下载：
28LV64SI-6 PDF

其它相似电子元器件型号资料

• 28LV64SC-3 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
• 28LV64SC-4 TRBIC
  Speed 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SC-5 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
• 28LV64SC-6 TRBIC
  Speed 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SI-3 TRBIC
  Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SI-4 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
• 28LV64SI-5 TRBIC
  Speed 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SI-6 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
• 28LV64SM-3 TRBIC
  Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SM-4 TRBIC
  Speed 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SM-5 TRBIC
  Speed 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64SM-6 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.

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