电子元器件 5962R9684501QYA PDF资料
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型号: 5962R9684501QYA
生产厂家:
UTMC耐温:
功能描述:
Dual-port SRAM SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si).PDF文件大小: Kb PDF页数: Page
具体资料功能参数数据:
Datasheet下载:
5962R9684501QYA PDF
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Dual-port SRAM SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684501QXX UTMC
Dual-port SRAM SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684501QYA UTMC
Dual-port SRAM SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684501QYX UTMC
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Dual-port SRAM SMD with busy flag. Lead finish gold. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502QXX UTMC
Dual-port SRAM SMD with busy flag. Lead finish optional. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502QYA UTMC
Dual-port SRAM SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502QYC UTMC
Dual-port SRAM SMD with busy flag. Lead finish gold. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502QYX UTMC
Dual-port SRAM SMD with busy flag. Lead finish optional. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502VXC UTMC
Dual-port SRAM SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502VYA UTMC
Dual-port SRAM SMD with busy flag. Lead finish solder. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si). - 5962R9684502VYC UTMC
Dual-port SRAM SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 1E5 rads(Si).
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