电子元器件 F2213 PDF资料
-
型号： F2213
生产厂家：
POLYFET[Polyfet Devices]耐温：
功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTORPDF文件大小： Kb PDF页数： Page
具体资料功能参数数据：
Datasheet下载：
F2213 PDF
其它相似电子元器件型号资料
- F22-009-210-AGGE MITSUMI[Mitsumi Electronics, Corp.]
Memory Card Connectors - F2201
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR? - F2201S Polyfet RF Devices
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - F2202
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR? - F2202S ETC
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER - F220L
Peripheral IC - F2211 POLYFET[Polyfet Devices]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2212 POLYFET[Polyfet Devices]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2213 POLYFET[Polyfet Devices]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR - F2223-21SH Hamamatsu Corporation
ASSEMBLY - F2224-11 Hamamatsu
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics - F2224-11M Hamamatsu
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics - F2224-11P Hamamatsu
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics - F2224-11S Hamamatsu
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics - F2224-14 Hamamatsu
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam