电子元器件 K4E170411D-F PDF资料

• 型号： K4E170411D-F

  生产厂家：
  Samsung

  耐温：
  

  功能描述：
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.

  PDF文件大小： Kb PDF页数： Page

  买 K4E170411D-F

具体资料功能参数数据：

Datasheet下载：
K4E170411D-F PDF

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• K4E170411D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170411D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170412D SAMSUNG[Samsung semiconductor]
  4Bit CMOS Dynamic with Extended Data
• K4E170412D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
• K4E170412D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

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