Date PDF pentru 2SA109107 rezultatele de căutare
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Partea nr: 2SA109107
Producator:
Toshiba SemiconductorTemperatura:
Descriere:
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Tube Brightness Control ApplicationsPDF Dimensiune: Kb PDF Pagini: Page
DatasheetPDF găsit 1 de potrivire documentele PDF interogare:
Date de descărcare:
2SA109107 PDF
Legate parte nu
- 2SA1090 Toshiba
(2SAxxx) Transistors - 2SA1091 Toshiba Semiconductor
TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE TUBE BRIGHTNESS CONTROL) - 2SA109107 Toshiba Semiconductor
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Tube Brightness Control Applications - 2SA1091O
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-92 - 2SA1091R
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-92 - 2SA1091_07 Toshiba Semiconductor
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications - 2SA1093 Toshiba Semiconductor
SILICON EPITAXIAL TYPE PROCESS) - 2SA1094 Unknow
SILICON EPITAXIAL TRANSISTOR - 2SA1095 TOSHIBA
Silicon Epitaxial Type Process) - 2SA1096 Panasonic Semiconductor
Silicon epitaxial planar type(For low-frequency power amplification) - 2SA1096A Panasonic Semiconductor
Silicon epitaxial planar type(For low-frequency power amplification) - 2SA1096AQ
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-126 - 2SA1096AR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-126 - 2SA1096Q
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-126 - 2SA1096R
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-126
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