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2SC3114U PDF
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- 2SC3101 Mitsubishi Electric Semiconductor
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3102 Mitsubishi Electric Electronics
TRANSISTOR,BJT,NPN,17V V(BR)CEO,18A I(C),SOT-160VAR - 2SC3103 Mitsubishi Electric Semiconductor
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3104 Mitsubishi Electric Semiconductor
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3105 Mitsubishi
EPITAXIAL PLANAR TYPE - 2SC3110 Inchange Semiconductor Company Limited
Silicon Transistor - 2SC3112 TOSHIBA[Toshiba Semiconductor]
TRANSISTOR AUDIO AMPLIFIER SWITCHING APPLICATIONS) - 2SC311207 Toshiba Semiconductor
Silicon Epitaxial Type process) Audio Amplifier Switching Applications - 2SC3112A
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 - 2SC3112B
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 - 2SC3112_07 Toshiba Semiconductor
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications - 2SC3113 Toshiba Semiconductor
TRANSISTOR AUDIO AMPLFIER SWITCHING APPLICATIONS) - 2SC3113A
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK - 2SC3113B
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK - 2SC3114 SANYO[Sanyo Semicon Device]
High-VEBOAF Applications
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