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Cărare: Datasheet PDF > Producator semiconductoare > HN1C01FUY > HN1C01FUY Datasheet

Date PDF pentru HN1C01FUY rezultatele de căutare

  • Partea nr: HN1C01FUY

    Producator:

    Temperatura:

    Descriere:
    TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP

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    EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
  • HN1C01F07 Toshiba Semiconductor
    Audio-Frequency General-Purpose Amplifier Applications
  • HN1C01FE Toshiba Semiconductor
    Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications
  • HN1C01FGR
    TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
  • HN1C01FU Toshiba Semiconductor
    EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
  • HN1C01FU07 Toshiba Semiconductor
    Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications
  • HN1C01FUGR
    TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
  • HN1C01FUY
    TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
  • HN1C01FU_07 Toshiba Semiconductor
    Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
  • HN1C01FY
    TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
  • HN1C01F_07 Toshiba Semiconductor
    Audio-Frequency General-Purpose Amplifier Applications

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