Date PDF pentru KM416C1004CT-45 rezultatele de căutare
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Partea nr: KM416C1004CT-45
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SamsungTemperatura:
Descriere:
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64msPDF Dimensiune: Kb PDF Pagini: Page
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KM416C1004CT-45 PDF
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- KM416C1004BJ-45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BJ-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-L7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BT-7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
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