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Partea nr: KM416V1204BJ-L5
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SamsungTemperatura:
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3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsPDF Dimensiune: Kb PDF Pagini: Page
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- KM416V1204BJ Samsung semiconductor
16BIT CMOS DYNAMIT WITH EXTENDED DATA - KM416V1204BJ-5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1204BJ-6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1204BJ-7 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416V1204BJ-L5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1204BJ-L6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1204BJ-L7 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416V1204BT-5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1204BT-6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1204BT-7 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416V1204BT-L5 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416V1204BT-L6 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416V1204BT-L7 Samsung
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416V1204C
16Bit CMOS Dynamic with Extended Data - KM416V1204C-45 SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data
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