Datasheet PDF pro 2SC3621R výsledky vyhledávání

• Část č.: 2SC3621R

  Výrobce:
  

  Teplota:
  

  Popis:
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-126

  Velikost PDF: Kb PDF Strany: Page

  Koupit 2SC3621R

DatasheetPDF nalezeno 1 PDF dokumenty odpovídající dotazu:

Související část ne

• 2SC3600 Sanyo Semicon Device
  high-Definition Display Video Output Applications
• 2SC3600C
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600D
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600E
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600F
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3601 Sanyo
  PNP/NPN Epitaxial Planar Silicon Transistors
• 2SC3601C
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601D
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601E
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601F
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3602
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X
• 2SC3603 NEC[NEC]
  EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION
• 2SC3604 NEC[NEC]
  EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION
• 2SC3605 Toshiba
  VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS
• 2SC3606
  EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam