Datasheet PDF pro 2SC510807 výsledky vyhledávání

• Část č.: 2SC510807

  Výrobce:
  Toshiba Semiconductor

  Teplota:
  

  Popis:
  Silicon Epitaxial Planar Type Application

  Velikost PDF: Kb PDF Strany: Page

  Koupit 2SC510807

DatasheetPDF nalezeno 1 PDF dokumenty odpovídající dotazu:

Datasheet ke stažení:
2SC510807 PDF

Související část ne

• 2SC510
  TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-39
• 2SC5100 SANKEN[Sanken electric]
  Silicon Triple Diffused Planar Transistor(Audio General Purpose)
• 2SC5101 Inchange Semiconductor Company Limited
  Silicon Power Transistors
• 2SC5103 ROHM
  High speed switching transistor
• 2SC510309 Rohm
  High speed switching transistor
• 2SC5103F5
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252
• 2SC5103F5P
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252
• 2SC5103F5Q
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252
• 2SC5103P
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR
• 2SC5103Q
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR
• 2SC5104 Matsshita Panasonic
  Power Transistors
• 2SC5105 Hitachi Semiconductor
  Silicon NPN Triple Diffused Planar(???????PN?????
• 2SC5106 Toshiba
  APPLICATION
• 2SC5106O
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236AB
• 2SC5106Y
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236AB

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