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Del nr.: 2SC3425_06
Producent:
Toshiba SemiconductorTemperatur:
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Silicon Triple Diffused Type Process)PDF Størrelse: Kb PDF Sider: Page
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2SC3425_06 PDF
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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SC3421Y
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126
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