Datablad PDF for APT10M07 søgeresultaterne
-
Del nr.: APT10M07
Producent:
ADPOW[Advanced Power Technology]Temperatur:
Beskrivelse:
Power generation high voltage N-Channel enhancement mode power MOSFETs.PDF Størrelse: Kb PDF Sider: Page
DatasheetPDF fundet 1 PDF-dokumenter, der passer til din søgning:
Datablad Download:
APT10M07 PDF
Relaterede del nr.
- APT100-101DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP - APT1001 ADPOW[Advanced Power Technology]
Power generation gate charge, high voltage N-Channel enhancement mode power MOSFETs - APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 - APT1001R1AVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs - APT1001R1BN Advanced Power Technology
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD - APT1001R1BVFR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP - APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO - APT1001R1HVR Advanced Power Technology
Power generation high voltage N-Channel enhancement mode power MOSFETs. - APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB - APT1001R2AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3 - APT1001R2BN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD - APT1001R2HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM - APT1001R3AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam