Datablad PDF for GT20D101 søgeresultaterne
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Del nr.: GT20D101
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Toshiba SemiconductorTemperatur:
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CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)PDF Størrelse: Kb PDF Sider: Page
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GT20D101 PDF
Relaterede del nr.
- GT20D101 Toshiba Semiconductor
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) - GT20D101O
TRANSISTOR | IGBT | N-CHAN | 250V V(BR)CES | 20A I(C) | TO-247VAR - GT20D101Y
TRANSISTOR | IGBT | N-CHAN | 250V V(BR)CES | 20A I(C) | TO-247VAR - GT20D201 Toshiba Semiconductor
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) - GT20D201O
TRANSISTOR | IGBT | P-CHAN | 250V V(BR)CES | 20A I(C) | TO-247VAR - GT20D201Y
TRANSISTOR | IGBT | P-CHAN | 250V V(BR)CES | 20A I(C) | TO-247VAR
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