Tuotetiedot PDF- 2SC271507 Hakutulokset

• Osa nro: 2SC271507

  Valmistaja:
  Toshiba Semiconductor

  Lämpötila:
  

  Kuvaus:
  Silicon Epitaxial Planar Type process)

  Pdf koko: Kb PDF-sivut: Page

  Ostaa 2SC271507

DatasheetPDF löytyi 1 PDF-dokumentteja Löytyneitä:

Datasheet Lataa:
2SC271507 PDF

Teemat osa n: o

• 2SC2710 Toshiba Semiconductor
  TRANSISTOR AUDIO AMPLIFIER APPLICATIONS)
• 2SC2710O
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK
• 2SC2710Y
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK
• 2SC2712 Toshiba Semiconductor
  TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)
• 2SC2712-G-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-L-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-O-AE3-R
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-X-AE3-R
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712-Y-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC271207 Toshiba Semiconductor
  Silicon Epitaxial Type process)
• 2SC2712BL Weitron Technology
  
• 2SC2712GR Weitron Technology
  
• 2SC2712GT1G Semiconductor
  Medium Frequency Amplifier Transistor
• 2SC2712L-G-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR
• 2SC2712L-L-AE3-R Unisonic Technologies
  AUDIO FREQUENCY AMPLIFIER TRANSISTOR

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