Tuotetiedot PDF- IRG4BC40MD Hakutulokset
-
Osa nro: IRG4BC40MD
Valmistaja:
International RectifierLämpötila:
Kuvaus:
Rate Equivalent Device HoursPdf koko: Kb PDF-sivut: Page
DatasheetPDF löytyi 1 PDF-dokumentteja Löytyneitä:
Datasheet Lataa:
IRG4BC40MD PDF
Teemat osa n: o
- IRG4BC40 IR
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A - IRG4BC40F International Rectifier
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) - IRG4BC40FD International Rectifier
Rate Equivalent Device Hours - IRG4BC40FPBF
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT - IRG4BC40K International Rectifier
Rate Equivalent Device Hours - IRG4BC40KD International Rectifier
Rate Equivalent Device Hours - IRG4BC40KPBF IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR - IRG4BC40MD International Rectifier
Rate Equivalent Device Hours - IRG4BC40S
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) - IRG4BC40SD International Rectifier
Rate Equivalent Device Hours - IRG4BC40SPBF IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT - IRG4BC40U International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) - IRG4BC40UD International Rectifier
Rate Equivalent Device Hours - IRG4BC40UPBF IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT - IRG4BC40W IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam