Tuotetiedot PDF- K4E641612B-TL50 Hakutulokset
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Osa nro: K4E641612B-TL50
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SamsungLämpötila:
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4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low powerPdf koko: Kb PDF-sivut: Page
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K4E641612B-TL50 PDF
Teemat osa n: o
- K4E641612B SAMSUNG[Samsung semiconductor]
16bit CMOS Dynamic with Extended Data - K4E641612B-L Samsung semiconductor
16bit CMOS Dynamic with Extended Data - K4E641612B-TC SAMSUNG[Samsung semiconductor]
16bit CMOS Dynamic with Extended Data - K4E641612B-TC45 Samsung
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns - K4E641612B-TC50 Samsung
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns - K4E641612B-TL45 Samsung
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power - K4E641612B-TL50 Samsung
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power - K4E641612B-TL60 Samsung
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
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