PDF-Datenblatt für  28LV64TM-4  Suchergebnisse

• Art-Nr: 28LV64TM-4

  Hersteller:
  Turbo-IC

  Temperatur:
  

  Beschreibung:
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 28LV64TM-4

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28LV64TM-4 PDF

Verwandte Bestell-Nr

• 28LV64TC-3 TRBIC
  Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64TC-4 TRBIC
  Speed 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64TC-5 TRBIC
  Speed 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64TC-6 TRBIC
  Speed 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64TI-3 TRBIC
  Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
• 28LV64TI-4 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
• 28LV64TI-5 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
• 28LV64TI-6 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
• 28LV64TM-3 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
• 28LV64TM-4 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
• 28LV64TM-5 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
• 28LV64TM-6 Turbo-IC
  Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.

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