PDF-Datenblatt für  2SB1623Q  Suchergebnisse

• Art-Nr: 2SB1623Q

  Hersteller:
  

  Temperatur:
  

  Beschreibung:
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220VAR

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SB1623Q

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Verwandte Bestell-Nr

• 2SB1602 Toshiba
  POWER AMPLIFIER APPLICATIONS
• 2SB1603 Panasonic Semiconductor
  Silicon epitaxial planar type(For low-voltage switching)
• 2SB1603A Panasonic Semiconductor
  Silicon epitaxial planar type(For low-voltage switching)
• 2SB1604 Panasonic Semiconductor
  Silicon epitaxial planar type(For low-voltage switching)
• 2SB1604A Panasonic Semiconductor
  Silicon epitaxial planar type(For low-voltage switching)
• 2SB1605 Panasonic Semiconductor
  Silicon epitaxial planar type(For low-freauency power amplification)
• 2SB1605A Panasonic
  Silicon epitaxial planar type(For low-freauency power amplification)
• 2SB1606 Panasonic Semiconductor
  Silicon epitaxial planar type(For power switching)
• 2SB1607 Panasonic Semiconductor
  Silicon epitaxial planar type(For power switching)
• 2SB1612 Panasonic Semiconductor
  Silicon epitaxial planer type(For low-frequency amplification)
• 2SB1614
  TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 2A I(C) | SOT-89
• 2SB1616 ROHM[Rohm]
  TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE
• 2SB1617 Toshiba Semiconductor
  TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, SUPER SWITCHING, AMPLIFIER APLICATIONS)
• 2SB161706 Toshiba Semiconductor
  Silicon Epitaxial Type (Darlington)
• 2SB1617_06 Toshiba Semiconductor
  Silicon PNP Epitaxial Type (Darlington)

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