PDF-Datenblatt für 2SC3209L Suchergebnisse
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Art-Nr: 2SC3209L
Hersteller:
NECTemperatur:
Beschreibung:
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-221VARPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Verwandte Bestell-Nr
- 2SC32
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5 - 2SC3200 KEC(Korea Electronics)
SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) - 2SC3201 KEC(Korea Electronics)
SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) - 2SC3202 Korea Electronics
SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) - 2SC3203 KEC(Korea Electronics)
SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) - 2SC3205 KEC(Korea Electronics)
2SC3229 - 2SC3206 Korea Electronics
SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) - 2SC3208 Korea Electronics
Transistor - 2SC3209 NEC[NEC]
SILICON POWER TRANSISTOR - 2SC3209K NEC
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-221VAR - 2SC3209L NEC
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-221VAR - 2SC3209M NEC
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-221VAR - 2SC3210 Inchange Semiconductor Company Limited
Silicon Power Transistors - 2SC3211 Matsshita Panasonic
Power Transistors - 2SC3211A Matsshita Panasonic
Power Transistors
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