PDF-Datenblatt für  2SC3359SP  Suchergebnisse

• Art-Nr: 2SC3359SP

  Hersteller:
  

  Temperatur:
  

  Beschreibung:
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK

  PDF Größe: Kb PDF-Seiten: Page

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Verwandte Bestell-Nr

• 2SC3351-L NEC
  For amplify low noise and high frequency.
• 2SC3351-T1B NEC
  For amplify low noise and high frequency.
• 2SC3351-T2B NEC
  For amplify low noise and high frequency.
• 2SC3352 Inchange Semiconductor Company Limited
  Silicon Power Transistors
• 2SC3352A
  TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 1.5A I(C) | SOT-186
• 2SC3353 Inchange
  Silicon Power Transistor
• 2SC3353A
  TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | SOT-186
• 2SC3354 PANASONIC[Panasonic Semiconductor]
  Silicon epitaxial planer type(For high-frequency amplification/oscillation/mixing)
• 2SC3354S
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
• 2SC3354T
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
• 2SC3355 Continental Device India
  TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92
• 2SC3355(NE85632)
  Discrete
• 2SC3355-T NEC
  For amplify low noise and high frequency
• 2SC3355K NEC
  TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-92
• 2SC3356 California Eastern Laboratories
  UHF/Microwave

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