PDF-Datenblatt für  2SC3391C  Suchergebnisse

• Art-Nr: 2SC3391C

  Hersteller:
  

  Temperatur:
  

  Beschreibung:
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK

  PDF Größe: Kb PDF-Seiten: Page

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Verwandte Bestell-Nr

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• 2SC3302 TOSHIBA
  TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATION
• 2SC3303 Toshiba Semiconductor
  EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS)
• 2SC3303O
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA
• 2SC3303Y
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA
• 2SC3306 Toshiba
  SWITCHING TEGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS
• 2SC3307 Toshiba
  HIGH SPEED HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
• 2SC330706 Toshiba Semiconductor
  Silicon Triple Diffused Type High-Speed High-Voltage Switching Applications
• 2SC3307_06 Toshiba Semiconductor
  Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications
• 2SC3308
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR
• 2SC3309
  SILICON TRIPLE DIFFUSED TYPE
• 2SC3310 Toshiba Semiconductor
  SILICON TRIPLE DIFFUSED TYPE
• 2SC3311A Panasonic Semiconductor
  Silicon epitaxial planer type(For low-frequency amplification)
• 2SC3311AQ
  TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72

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