PDF-Datenblatt für  2SC342506  Suchergebnisse

• Art-Nr: 2SC342506

  Hersteller:
  Toshiba Semiconductor

  Temperatur:
  

  Beschreibung:
  Silicon Triple Diffused Type Process)

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SC342506

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2SC342506 PDF

Verwandte Bestell-Nr

• 2SC3420 Toshiba Semiconductor
  EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
• 2SC342006 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Strobe Flash Applications
• 2SC3420BL
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420GR
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420Y
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
• 2SC3420_06 Toshiba Semiconductor
  Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications
• 2SC3421 Toshiba
  AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
• 2SC342106 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Audio Frequency Power Amplifier Applications
• 2SC3421O
  TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126
• 2SC3421Y
  TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126
• 2SC3421_06 Toshiba Semiconductor
  Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
• 2SC3422 Toshiba Semiconductor
  EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, SPEED SWITCHING)
• 2SC342206 Toshiba Semiconductor
  Silicon Epitaxial Type Process) Audio Frequency Power Amplifier
• 2SC3422O
  TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126
• 2SC3422Y
  TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126

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