PDF-Datenblatt für  2SC3602  Suchergebnisse

• Art-Nr: 2SC3602

  Hersteller:
  

  Temperatur:
  

  Beschreibung:
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SC3602

 DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:

Verwandte Bestell-Nr

• 2SC3000 Sanyo
  Epitaxial Planar Silicon Transistor
• 2SC3000D
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3000E
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3000F
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
• 2SC3001 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3004 Hitachi Semiconductor
  Silicon NPN Epitaxial(???NPN?????
• 2SC3006 Toshiba Semiconductor
  TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS)
• 2SC3007 Toshiba Semiconductor
  SILICON EPITAXIAL TYPE PROCESS)
• 2SC3011 Toshiba
  UHF~C BAND NOISE AMPLIFIER APPLICATIONS
• 2SC3012
  SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
• 2SC3017 Mitsubishi
  EPITAXIAL PLANAR TYPE
• 2SC3018 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3019 Mitsubishi
  EPITAXIAL PLANAR TYPE
• 2SC3020 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)
• 2SC3021 Mitsubishi Electric Semiconductor
  EPITAXIAL PLANAR TYPE POWER TRANSISTOR)

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam