PDF-Datenblatt für  2SC511007  Suchergebnisse

• Art-Nr: 2SC511007

  Hersteller:
  Toshiba Semiconductor

  Temperatur:
  

  Beschreibung:
  Silicon Epitaxial Planar Type Application

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SC511007

 DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:

Datenblatt Download:
2SC511007 PDF

Verwandte Bestell-Nr

• 2SC5110 Toshiba
  APPLICATION
• 2SC511007 Toshiba Semiconductor
  Silicon Epitaxial Planar Type Application
• 2SC5110O
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70
• 2SC5110Y
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70
• 2SC5110_07 Toshiba Semiconductor
  Silicon NPN Epitaxial Planar Type For VCO Application
• 2SC5111 Toshiba
  APPLICATION
• 2SC5111FT Toshiba
  VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS
• 2SC5111FTO
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416
• 2SC5111FTY
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416
• 2SC5111O
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR
• 2SC5111Y
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR
• 2SC5112 ROHM[Rohm]
  TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE
• 2SC5113 ROHM[Rohm]
  TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE
• 2SC5114 ETC[ETC]
  TRANSISTORS
• 2SC5115
  TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 10A I(C) | TO-263AB

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam