PDF-Datenblatt für  2SC5606_1  Suchergebnisse

• Art-Nr: 2SC5606_1

  Hersteller:
  SILICON

  Temperatur:
  

  Beschreibung:
  SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SC5606_1

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2SC5606_1 PDF

Verwandte Bestell-Nr

• 2SC5600
  TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR
• 2SC5600-T1
  TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR
• 2SC5602
  TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416
• 2SC5602-T1
  TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416
• 2SC5603
  TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR
• 2SC5603-T1
  TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR
• 2SC5606
  SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
• 2SC5606(NE66219)
  Discrete
• 2SC5606-A SILICON
  SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608
• 2SC5606-T1
  
• 2SC5606-T1-A SILICON
  SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608
• 2SC56061 SILICON
  SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608
• 2SC5606_1 NEC
  NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
• 2SC5607 Sanyo
  Epitaxial Planar Silicon Transistors
• 2SC5609 Panasonic Semiconductor
  Silicon epitaxial planer type

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