PDF-Datenblatt für  2SD811  Suchergebnisse

• Art-Nr: 2SD811

  Hersteller:
  Toshiba

  Temperatur:
  

  Beschreibung:
  (2SDxxx) TRANSISTOR

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SD811

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2SD811 PDF

Verwandte Bestell-Nr

• 2SD803 Panasonic Semiconductor
  DIFFUSED JUNCTION MESA
• 2SD806
  TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C)
• 2SD809 Panasonic Semiconductor
  Audio Frequency Power Amplifier,Low Speed Switching
• 2SD811 Toshiba
  (2SDxxx) TRANSISTOR
• 2SD812 Inchange
  Silicon Power Transistor
• 2SD812P
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD812Q
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD812R
  TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB
• 2SD813 Panasonic Semiconductor
  EPITAXIAL PLANAR
• 2SD814 Panasonic Semiconductor
  Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification)
• 2SD814A Panasonic Semiconductor
  Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification)
• 2SD814AQ
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814AR
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814AS
  TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346
• 2SD814Q
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346

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