PDF-Datenblatt für  2SJ200_07  Suchergebnisse

• Art-Nr: 2SJ200_07

  Hersteller:
  Toshiba Semiconductor

  Temperatur:
  

  Beschreibung:
  High Power Amplifier Application

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SJ200_07

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2SJ200_07 PDF

Verwandte Bestell-Nr

• 2SJ200 Toshiba Semiconductor
  CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
• 2SJ20007 Toshiba Semiconductor
  High Power Amplifier Application
• 2SJ200O
  TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
• 2SJ200Y
  TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR
• 2SJ200_07 Toshiba Semiconductor
  High Power Amplifier Application
• 2SJ201 Toshiba Semiconductor
  CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
• 2SJ20107 Toshiba Semiconductor
  High-Power Amplifier Application
• 2SJ20109 Toshiba
  High-Power Amplifier Application
• 2SJ201O
  TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
• 2SJ201Y
  TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
• 2SJ201_07 Toshiba Semiconductor
  High-Power Amplifier Application
• 2SJ202 NEC[NEC]
  P-CHANNEL SWITCHING
• 2SJ202-T1 NEC
  MOS field effect transistor
• 2SJ202-T2 NEC
  MOS field effect transistor
• 2SJ203 Guangdong Kexin Industrial Co.,Ltd
  Fied Effect Transistor

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