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Pfad: Datasheet PDF > Halbleiter-Hersteller > BF998RW > BF998RW Datenblatt

PDF-Datenblatt für  BF998RW  Suchergebnisse

  • Art-Nr: BF998RW

    Hersteller:
    Vishay Telefunken

    Temperatur:

    Beschreibung:
    N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

    PDF Größe: Kb PDF-Seiten: Page

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Datenblatt Download:
BF998RW PDF

Verwandte Bestell-Nr

  • BF990A PHILIPS[Philips Semiconductors]
    N-channel dual-gate MOS-FET
  • BF990AT/R
    TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 30MA I(D) | SOT-143
  • BF991 Philips Semiconductors
    N-channel dual-gate MOS-FET
  • BF9912
    From datasheet system
  • BF991T/R
    TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(D) | SOT-143
  • BF992 Philips Semiconductors
    Silicon N-channel dual gate MOS-FET
  • BF992/R
    Silicon N-Channel Dual-Gate MOS-FETs
  • BF9923
    From datasheet system
  • BF992T/R
    TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 40MA I(D) | SOT-143
  • BF993
    TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143
  • BF994 SIEMENS[Siemens Semiconductor Group]
    Silicon Channel MOSFET Tetrode applications, especially input mixer stages with wide tuning range, e.g. CATV tuners)
  • BF994S PHILIPS
    N-channel dual-gate MOS-FET
  • BF994S2
    From datasheet system
  • BF994SA Vishay Telefunken
    N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
  • BF994SB Vishay Telefunken
    N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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