PDF-Datenblatt für  CM100DY12H  Suchergebnisse

• Art-Nr: CM100DY12H

  Hersteller:
  

  Temperatur:
  

  Beschreibung:
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen CM100DY12H

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Verwandte Bestell-Nr

• CM100DY MITSUBISHI[Mitsubishi Electric Semiconductor]
  HIGH POWER SWITCHING
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  HIGH POWER SWITCHING INSULATED TYPE
• CM100DY-24A Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING
• CM100DY-24A09 Mitsubishi
  IGBT MODULES HIGH POWER SWITCHING
• CM100DY-24H Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• CM100DY-24NF MITSUBISHI[Mitsubishi Electric Semiconductor]
  HIGH POWER SWITCHING
• CM100DY-28H Powerex Power Semiconductors
  Dual IGBTMOD Amperes/1400 Volts
• CM100DY-34A Mitsubishi
  HIGH POWER SWITCHING
• CM100DY12E
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
• CM100DY12H
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
• CM100DY24E
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
• CM100DY24H
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
• CM100DY28
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 100A I(C)
• CM100DY28H
  TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 100A I(C)

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